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NTD4855N-1G

Part No NTD4855N-1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 14A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 14A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 32.7nC @ 4.5V
Max Input Capacitance 2950pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.35W (Ta), 66.7W (Tc)
Maximum Rds On at Id,Vgs 4.3 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1083805-NTD4855N-1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTD4855N-1G CAD Model

Description

The ON Semiconductor NTD4855N-1G is a high-performance Power MOSFET that is designed to meet a wide range of applications requiring efficient power management and delivery. This N-channel transistor is a testament to ON Semiconductor's commitment to providing industry-leading solutions for power conversion and switching.

Key Features

  • Low R<sub>DS(on): The device features a low on-state resistance, which minimizes conduction losses and improves overall efficiency.
  • High Current Capacity: With a continuous drain current of 30 A, the NTD4855N-1G can handle high current loads, making it suitable for demanding applications.
  • Power Dissipation: It has a power dissipation of 48 W, ensuring that the device can manage significant power levels without overheating.
  • Voltage Rating: The MOSFET is rated for a drain-to-source voltage of 30 V, which allows for a wide range of operations in different circuit configurations.
  • Fast Switching Speed: The fast switching capability of the NTD4855N-1G makes it ideal for high-speed applications such as switching regulators and DC-DC converters.

Applications

The versatility of the NTD4855N-1G allows it to be used in various applications including, but not limited to, power supply circuits, motor control systems, and lighting solutions. It is also commonly employed in automotive environments, where reliability and efficiency are of paramount importance.

Package and Quality

Packaged in a Pb-free, RoHS compliant IPAK (TO-251) package, the NTD4855N-1G is designed with environmental considerations in mind. The device is part of ON Semiconductor's portfolio of energy-efficient products, which align with global energy conservation standards.

In conclusion, the NTD4855N-1G Power MOSFET from ON Semiconductor is a robust and reliable component that offers excellent performance for a wide array of power management tasks. Its combination of low on-state resistance, high current capability, and fast switching speeds make it a compelling choice for designers looking to optimize their power circuitry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5177 $59.5355
275+ $0.4248 $116.8200
425+ $0.4116 $174.9300
585+ $0.3982 $232.9470
755+ $0.3850 $290.6750
1,005+ $0.3451 $346.8255
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 65,000 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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