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NTD4865N-1G

Part No NTD4865N-1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 8.5A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 8.5A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 10.8nC @ 4.5V
Max Input Capacitance 827pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.27W (Ta), 33.3W (Tc)
Maximum Rds On at Id,Vgs 10.9 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1083812-NTD4865N-1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTD4865N-1G CAD Model

Description

ON Semiconductor NTD4865N-1G - Power MOSFET

The NTD4865N-1G is a high-performance Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is part of ON Semiconductor's extensive portfolio of semiconductor components, known for their reliability and cutting-edge technology.

Key Features

  • Low On-Resistance: The NTD4865N-1G boasts a low on-resistance, ensuring minimal power loss and improved efficiency during operation.
  • High Current Capability: With the ability to handle high currents, this MOSFET is suitable for a wide range of power applications.
  • Low Gate Charge: The device has been optimized for a low gate charge, which facilitates faster switching and reduces power consumption.
  • High Performance: Designed to deliver high performance, the NTD4865N-1G is ideal for demanding applications that require robust and efficient power management.

Applications

The NTD4865N-1G is versatile and can be used in various applications, including:

  • DC/DC converters
  • Power management for computers and notebooks
  • Motor control circuits
  • Load switch applications

Product Specifications

The NTD4865N-1G comes in a compact package and is characterized by the following specifications:

  • Drain-to-Source Voltage (V<sub>DS): 30V
  • Continuous Drain Current (I<sub>D): 13.5A
  • Power Dissipation (P<sub>D): 2.5W
  • R<sub>DS(on): 20 mΩ at V<sub>GS = 10V
  • Package: TO-252 (DPAK)

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The NTD4865N-1G is no exception, undergoing rigorous testing to ensure it meets the highest standards for performance and reliability.

For detailed information, including datasheets, technical documentation, and support, visit ON Semiconductor's official website or contact your local sales representative.

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Pricing & Ordering

Quantity Unit Price Ext. Price
190+ $0.3068 $58.2920
460+ $0.2518 $115.8280
715+ $0.2439 $174.3885
980+ $0.2361 $231.3780
1,270+ $0.2282 $289.8140
1,695+ $0.2046 $346.7970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 65,000 pieces
MOQ: 190 pcs
Order Increment : 1 pcs
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