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NTGS3136PT1G

Part No NTGS3136PT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3.7A 6-TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 29nC @ 4.5V
Max Input Capacitance 1901pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 33 mOhm @ 5.1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6
Win Source Part Number 025757-NTGS3136PT1G
Family Name NTGS3136P
Introduction Date October 08, 2004
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTGS3136PT1G CAD Model

Description

The ON Semiconductor NTGS3136PT1G is a high-performance N-Channel Power MOSFET designed for a variety of applications that require efficient power conversion and management. This robust component is part of ON Semiconductor's portfolio of energy-efficient devices, making it an ideal choice for engineers and designers looking to enhance system reliability and efficiency in their electronic designs.

Key Features

  • Low On-Resistance: The NTGS3136PT1G boasts an exceptionally low on-resistance of typically 54 mΩ at 10 V, which translates into reduced conduction losses and improved overall efficiency.
  • High Continuous Drain Current: This MOSFET can handle a continuous drain current of up to 2.1 A, making it suitable for high-density power applications.
  • Logic Level Gate Drive: With a threshold voltage designed for logic level gate drive, this device can be directly driven by low-power microcontrollers or logic circuits.
  • Low Threshold Voltage: The low threshold voltage (Vgs(th)) of 1.35 V (typical) ensures that the MOSFET can be easily controlled and is suitable for low voltage applications.
  • Fast Switching Speed: The NTGS3136PT1G offers fast switching performance, which is crucial for reducing switching losses in high-frequency power switching applications.
  • Small Footprint: Housed in a compact SOT-23 package, this MOSFET is perfect for space-constrained applications.

Applications

The NTGS3136PT1G is versatile and can be used in a wide range of applications, including:

  • DC/DC Converters
  • Power Management Functions
  • Battery Powered Systems
  • Load Switches
  • Motor Control Circuits

Environmental and Regulatory Compliance

ON Semiconductor is committed to environmental stewardship. The NTGS3136PT1G is RoHS compliant and free from environmentally harmful substances. It meets various international standards for environmental and regulatory compliance, ensuring that it can be used in products sold worldwide.

With its combination of performance, efficiency, and compact size, the ON Semiconductor NTGS3136PT1G N-Channel Power MOSFET is an excellent choice for designers looking to create reliable and energy-efficient electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5723 $51.5070
215+ $0.4696 $100.9640
330+ $0.4550 $150.1500
455+ $0.4403 $200.3365
590+ $0.4256 $251.1040
790+ $0.3816 $301.4640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 245 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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