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NTJD4401NT2

Part No NTJD4401NT2
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 0.63A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 630mA
Maximum Rds On at Id,Vgs 375 mOhm @ 630mA, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 3nC @ 4.5V
Max Input Capacitance 46pF @ 20V
Maximum Power Dissipation 270mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 041974-NTJD4401NT2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTJD4401NT2 CAD Model

Description

ON Semiconductor NTJD4401NT2 Dual P-Channel Power MOSFET

Introducing the NTJD4401NT2, a high-performance dual P-Channel Power MOSFET from ON Semiconductor, designed to meet the needs of modern compact electronic applications. This MOSFET utilizes advanced PowerTrench technology to deliver low on-resistance and a high switching performance, making it an ideal choice for power management tasks within a wide range of electronic devices.

The NTJD4401NT2 features dual P-Channel MOSFETs in a compact 6-pin SuperSOT-6 package, which not only saves space on the PCB but also simplifies the design process by reducing the number of components required. This makes it particularly suitable for applications where space is at a premium, such as portable and battery-powered devices, as well as for load switch and power management functions in consumer electronics, telecommunications, and industrial systems.

Key specifications of the NTJD4401NT2 include a drain-source voltage (VDS) of -20V, a continuous drain current (ID) of -3.0A, and a power dissipation of 1.4W. The device also boasts an RDS(on) of just 58 mΩ at a VGS of -4.5V, which contributes to its efficiency by minimizing power losses during operation. Additionally, the NTJD4401NT2 features fast switching speeds, which enhances the overall performance of the system it is integrated into.

Safety and reliability are paramount for ON Semiconductor, and the NTJD4401NT2 is no exception. It includes built-in ESD protection, which guards against sudden electrostatic discharges that could otherwise damage the device. Moreover, the MOSFET operates over a wide temperature range, maintaining stability and performance even under varying environmental conditions.

In summary, the NTJD4401NT2 from ON Semiconductor is a versatile and reliable component that delivers the efficiency, space-saving, and high-performance characteristics needed for today's power-sensitive designs. Whether you're developing a new portable device or looking to enhance the power management system of an existing product, the NTJD4401NT2 is a solid choice that combines ON Semiconductor's commitment to quality with cutting-edge MOSFET technology.

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