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NTLJS4114NT1G

Part No NTLJS4114NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 3.6A 6-WDFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 13nC @ 4.5V
Max Input Capacitance 650pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 35 mOhm @ 2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-WDFN (2x2)
Dimension 6-WDFN Exposed Pad
Win Source Part Number 025790-NTLJS4114NT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTLJS4114NT1G CAD Model

Description

ON Semiconductor NTLJS4114NT1G Power MOSFET

Introducing the NTLJS4114NT1G, a high-performance Power MOSFET from the reputable ON Semiconductor. This device is a testament to ON Semiconductor's commitment to providing energy-efficient solutions to power electronic applications. The NTLJS4114NT1G is designed for a variety of uses, including power management tasks in consumer electronics, computing devices, and automotive applications, where efficiency and reliability are paramount.

The NTLJS4114NT1G is a P-Channel MOSFET that operates at -20 V drain-source voltage (Vds) and has a continuous drain current (Id) of -8 A, making it suitable for handling moderate power levels in electronic circuits. Its low threshold voltage ensures that it can be easily driven by logic-level voltages, which is particularly useful in low-voltage applications.

One of the notable features of the NTLJS4114NT1G is its ultra-low on-resistance (Rds(on)), which stands at just 13.5 mOhms at a Vgs of -4.5 V. This low on-resistance means that the MOSFET has minimal power loss when conducting, thereby increasing the overall efficiency of the system in which it is used. The device also offers fast switching speeds, which is essential for reducing switching losses and improving performance in high-frequency applications.

The NTLJS4114NT1G comes in a compact, surface-mount SOT-23 package, which is ideal for space-constrained applications. Its small footprint does not compromise its thermal performance, thanks to ON Semiconductor’s advanced technology that enhances heat dissipation, ensuring the device operates reliably even under high power conditions.

Furthermore, the MOSFET is characterized by its robustness, with features like a maximum junction temperature of 150°C and ESD protection. This ruggedness makes the NTLJS4114NT1G a reliable choice for demanding environments where durability is crucial.

In summary, the NTLJS4114NT1G from ON Semiconductor is a versatile, efficient, and reliable P-Channel Power MOSFET that is well-suited for a wide range of power management applications. Its low on-resistance, fast switching capabilities, and compact packaging make it an excellent choice for designers looking to optimize their power systems for both performance and size.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5821 $52.3890
210+ $0.4777 $100.3170
325+ $0.4627 $150.3775
450+ $0.4478 $201.5100
580+ $0.4329 $251.0820
775+ $0.3881 $300.7775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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