ON Semiconductor NTMFS4899NFT1G - Power MOSFET
The NTMFS4899NFT1G is a cutting-edge Power MOSFET device from ON Semiconductor, renowned for its high efficiency and reliability in a variety of applications. This product is designed to meet the rigorous demands of power regulation and switching in modern electronic circuits.
Key Features:
- Low RDS(on): This MOSFET boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved power efficiency in applications.
- High Continuous Drain Current (ID): With a robust continuous drain current rating, this device can handle significant power without overheating, making it suitable for high-power applications.
- Single N-Channel: As a single N-channel MOSFET, it offers simplicity in design and ease of integration into various circuit topologies.
- Power 56A3 Package: The device comes in a Power 56A3 package, which is designed for optimal thermal performance and space-saving on the PCB.
- RoHS Compliant: Compliance with RoHS standards ensures that the NTMFS4899NFT1G is environmentally friendly and free of hazardous substances.
Applications:
The NTMFS4899NFT1G is versatile and can be used in a wide range of applications, including:
- DC/DC Converters
- Power Supply Modules
- Motor Drives
- Computing Systems
- Automotive Applications
- High-Efficiency Power Management Solutions
Technical Specifications:
| Parameter |
Value |
| VDS (Drain-Source Voltage) |
30V |
| RDS(on) (at VGS = 10V) |
1.9mΩ |
| ID (Continuous Drain Current) |
80A |
| Qg (Total Gate Charge) |
23nC |
With its robust design and superior performance characteristics, the NTMFS4899NFT1G from ON Semiconductor is an ideal choice for designers looking for a reliable and efficient Power MOSFET for their next project.