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NTMFS4899NFT1G

Part No NTMFS4899NFT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V SO-8FL
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10.4A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 1600pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 920mW (Ta), 48W (Tc)
Maximum Rds On at Id,Vgs 5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 5-DFN (5x6) (8-SOFL)
Dimension 8-PowerTDFN, 5 Leads
Win Source Part Number 132199-NTMFS4899NFT1G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTMFS4899NFT1G CAD Model

Description

ON Semiconductor NTMFS4899NFT1G - Power MOSFET

The NTMFS4899NFT1G is a cutting-edge Power MOSFET device from ON Semiconductor, renowned for its high efficiency and reliability in a variety of applications. This product is designed to meet the rigorous demands of power regulation and switching in modern electronic circuits.

Key Features:

  • Low RDS(on): This MOSFET boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved power efficiency in applications.
  • High Continuous Drain Current (ID): With a robust continuous drain current rating, this device can handle significant power without overheating, making it suitable for high-power applications.
  • Single N-Channel: As a single N-channel MOSFET, it offers simplicity in design and ease of integration into various circuit topologies.
  • Power 56A3 Package: The device comes in a Power 56A3 package, which is designed for optimal thermal performance and space-saving on the PCB.
  • RoHS Compliant: Compliance with RoHS standards ensures that the NTMFS4899NFT1G is environmentally friendly and free of hazardous substances.

Applications:

The NTMFS4899NFT1G is versatile and can be used in a wide range of applications, including:

  • DC/DC Converters
  • Power Supply Modules
  • Motor Drives
  • Computing Systems
  • Automotive Applications
  • High-Efficiency Power Management Solutions

Technical Specifications:

Parameter Value
VDS (Drain-Source Voltage) 30V
RDS(on) (at VGS = 10V) 1.9mΩ
ID (Continuous Drain Current) 80A
Qg (Total Gate Charge) 23nC

With its robust design and superior performance characteristics, the NTMFS4899NFT1G from ON Semiconductor is an ideal choice for designers looking for a reliable and efficient Power MOSFET for their next project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0300 $61.8000
140+ $0.8452 $118.3280
215+ $0.8187 $176.0205
295+ $0.7923 $233.7285
380+ $0.7659 $291.0420
505+ $0.6867 $346.7835
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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