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NTMFS4925NT1G

Part No NTMFS4925NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9.7A SO-8FL
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9.7A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 21.5nC @ 10V
Max Input Capacitance 1264pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 920mW (Ta), 23.2W (Tc)
Maximum Rds On at Id,Vgs 5.6 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 5-DFN (5x6) (8-SOFL)
Dimension 8-PowerTDFN, 5 Leads
Win Source Part Number 060674-NTMFS4925NT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTMFS4925NT1G CAD Model

Description

ON Semiconductor NTMFS4925NT1G - Power MOSFET

The ON Semiconductor NTMFS4925NT1G is a high-performance Power MOSFET that delivers efficiency and power density needed for modern electronic applications. This N-channel MOSFET is part of ON Semiconductor's portfolio of energy-efficient devices, designed to meet the stringent requirements of today's power supply and electronic switching applications.

Featuring a maximum drain-source voltage (VDS) of 30V, the NTMFS4925NT1G is capable of handling significant power and is suitable for a wide range of applications, including DC/DC converters, power management in portable and battery-powered devices, and motor control systems. With a continuous drain current (ID) of 17.1A at 25°C, this MOSFET can efficiently manage high current loads while maintaining low on-state resistance (RDS(on)), which is specified at just 7.5 mΩ at a gate-source voltage (VGS) of 10V. This low RDS(on) helps to minimize power losses and improve overall system efficiency.

The NTMFS4925NT1G comes in a compact, surface-mountable SO-8FL package, which is designed to save space on printed circuit boards (PCBs) without compromising performance. Its package is engineered for optimal thermal performance, ensuring reliability and longevity even under high operating temperatures. Additionally, the device features a rugged gate oxide for enhanced durability and protection against voltage spikes.

ON Semiconductor has equipped the NTMFS4925NT1G with advanced technology to support fast switching speeds, which is crucial for reducing switching losses and improving the performance of high-frequency power circuits. This, along with its low gate charge (QG), makes it an excellent choice for high-efficiency power conversion applications.

In summary, the NTMFS4925NT1G from ON Semiconductor is a robust and efficient solution for designers looking to optimize their power management systems. Its combination of low on-state resistance, high current capability, and fast switching speeds makes it a versatile component for a broad array of power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8732 $52.3920
140+ $0.7165 $100.3100
220+ $0.6941 $152.7020
300+ $0.6717 $201.5100
390+ $0.6493 $253.2270
520+ $0.5821 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,780 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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