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NTMFS4927NT1G

Part No NTMFS4927NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 7.9A SO-8FL / Trans MOSFET N-CH 30V 13.6A 5-Pin(4+Tab) SO-FL T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.9A (Ta), 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 913pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 920mW (Ta), 20.8W (Tc)
Maximum Rds On at Id,Vgs 7.3 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 5-DFN (5x6) (8-SOFL)
Dimension 8-PowerTDFN, 5 Leads
Win Source Part Number 006257-NTMFS4927NT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name NTMFS4927N
Introduction Date July 06, 2010
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian NTMFS4927NT1G CAD Model

Description

ON Semiconductor NTMFS4927NT1G Power MOSFET

The NTMFS4927NT1G is a high-performance, single N-Channel Power MOSFET developed by ON Semiconductor, a renowned leader in energy-efficient innovations. This MOSFET is a testament to ON Semiconductor's commitment to providing advanced power management solutions that cater to a wide range of electronic applications. With its compact footprint and low on-resistance, the NTMFS4927NT1G is designed to deliver efficient power conversion and management, making it an ideal choice for space-constrained and power-sensitive designs.

Featuring a maximum drain-source voltage (VDS) of 30V, the NTMFS4927NT1G can handle significant power levels while maintaining a low threshold voltage, ensuring that it can be easily driven in various circuit configurations. The device's continuous drain current (ID) is rated at 17.5A at 25°C, which allows it to support high current applications without compromising performance.

The NTMFS4927NT1G boasts an ultra-low on-resistance (RDS(on)) of just 4.1mΩ at a gate voltage of 10V, which is crucial for minimizing conduction losses and improving overall efficiency. This low RDS(on) also translates to reduced heat generation, thereby enhancing the reliability and lifespan of the MOSFET, as well as the end application it is used in.

Encased in a compact, surface-mountable SO-8FL package, the NTMFS4927NT1G is designed for easy integration into a variety of circuit boards, including those found in computing, consumer electronics, and industrial systems. The package is optimized for low thermal resistance, ensuring that the device can operate effectively even under high power conditions.

In addition to its electrical performance, the NTMFS4927NT1G is also RoHS compliant, demonstrating ON Semiconductor's dedication to environmental responsibility by avoiding the use of hazardous substances in its products. This commitment not only helps protect the environment but also aligns with the regulatory requirements of many markets, making the NTMFS4927NT1G a responsible choice for designers and manufacturers looking to create eco-friendly products.

Overall, the NTMFS4927NT1G from ON Semiconductor represents a blend of performance, efficiency, and reliability, making it a versatile and valuable component in power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2575 $57.9375
550+ $0.2113 $116.2150
850+ $0.2047 $173.9950
1,170+ $0.1981 $231.7770
1,510+ $0.1915 $289.1650
2,020+ $0.1716 $346.6320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 45,500 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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