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NTMFS4934NT1G

Part No NTMFS4934NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 147A SO8FL
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 17.1A (Ta), 147A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 34nC @ 4.5V
Max Input Capacitance 5505pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 930mW (Ta), 69.44W (Tc)
Maximum Rds On at Id,Vgs 2 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 5-DFN (5x6) (8-SOFL)
Dimension 8-PowerTDFN, 5 Leads
Win Source Part Number 025805-NTMFS4934NT1G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTMFS4934NT1G CAD Model

Description

ON Semiconductor NTMFS4934NT1G - N-Channel Power MOSFET

The NTMFS4934NT1G is a high-performance N-Channel Power MOSFET manufactured by ON Semiconductor, a global leader in power and signal management solutions. This device is designed to meet a wide range of applications, offering a perfect balance of power efficiency and reliability for today's power electronic circuits.

Key Features

  • High Current Capability: The NTMFS4934NT1G is capable of handling continuous drain currents up to 30.8 A, making it suitable for high-power applications.
  • Low On-Resistance: With a typical on-resistance of just 8.7 mΩ at Vgs = 10 V, this MOSFET ensures high efficiency and minimal power loss during operation.
  • High-Temperature Performance: The device can operate at temperatures up to 150°C, ensuring reliability in harsh environments.
  • Single Pulse Avalanche Energy Rated: It is designed to withstand high-energy pulses in the avalanche and commutation modes, offering robustness for your circuit design.

Electrical Characteristics

  • Voltage Rating: The MOSFET has a drain-to-source voltage (Vds) rating of 30 V, making it ideal for a variety of low-voltage applications.
  • Gate Threshold Voltage: It features a gate threshold voltage (Vgs(th)) of 1.7 V, providing a quick and efficient switch-on performance.
  • Fast Switching Speed: The device is designed for fast switching applications, contributing to reduced switching losses.

Applications

  • Power Management in Computing and Consumer Applications
  • DC/DC Converters
  • Motor Drives
  • Power Supplies
  • Automotive Systems

With its advanced technology and robust design, the NTMFS4934NT1G from ON Semiconductor is an excellent choice for designers looking to enhance power efficiency and performance in their electronic designs. Its compact footprint and industry-standard package make it easy to integrate into a wide range of applications.

For more detailed information, including full datasheets, application notes, and design resources, please visit the ON Semiconductor website or contact their support team for technical assistance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9044 $58.7860
160+ $0.7415 $118.6400
245+ $0.7184 $176.0080
335+ $0.6953 $232.9255
430+ $0.6722 $289.0460
575+ $0.6029 $346.6675
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,950 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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