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NTMFS4937NT1G

Part No NTMFS4937NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 10.2A SO8FL
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10.2A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 2516pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 920mW (Ta), 43W (Tc)
Maximum Rds On at Id,Vgs 4 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 5-DFN (5x6) (8-SOFL)
Dimension 8-PowerTDFN, 5 Leads
Win Source Part Number 025808-NTMFS4937NT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTMFS4937NT1G CAD Model

Description

ON Semiconductor NTMFS4937NT1G MOSFET

The NTMFS4937NT1G is a high-performance Power MOSFET from ON Semiconductor, designed to meet a wide range of applications requiring efficient power management and reliability. This particular MOSFET is a part of the PowerTrench® series, which is known for its low on-resistance and low gate charge, making it an excellent choice for power conversion and management tasks.

With its advanced silicon technology, the NTMFS4937NT1G delivers superior performance that is optimized for synchronous rectification in DC/DC converters, which is critical for applications in computing, server power supplies, and telecommunications equipment. Its robust design also makes it suitable for other high-efficiency power management tasks such as Point of Load (POL) modules, motor drives, and battery management systems.

Key Features:

  • Low RDS(on): The device boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Continuous Drain Current (ID): It supports a high continuous drain current, enabling it to handle high-power applications with ease.
  • Low Gate Charge (QG): The low gate charge ensures fast switching performance, which is crucial for reducing switching losses in high-frequency operations.
  • Single N-Channel: As a single N-Channel MOSFET, it offers simplicity in circuit design and ease of integration into various power management systems.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® technology enhances the device's overall performance by optimizing the cell structure for low RDS(on) and high switching speed.

The NTMFS4937NT1G comes in a compact surface-mount package, specifically the 5x6 mm² flat lead, halogen-free Power 56 (P56) package. This package not only saves valuable board space but also ensures excellent thermal performance, which is vital for maintaining reliability and longevity in high-power and high-temperature environments.

As an ON Semiconductor product, the NTMFS4937NT1G is backed by the company's commitment to quality and environmental sustainability. It is RoHS compliant, reflecting ON Semiconductor's dedication to reducing the environmental impact of electronic components.

In summary, the NTMFS4937NT1G MOSFET is a state-of-the-art solution for designers looking to optimize power efficiency and performance in their electronic systems. Its combination of low on-resistance, high current capability, and fast switching speed makes it a versatile and reliable component for a wide array of power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6505 $52.0400
165+ $0.6094 $100.5510
255+ $0.5888 $150.1440
370+ $0.5476 $202.6120
475+ $0.5270 $250.3250
595+ $0.5065 $301.3675
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,160 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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