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NTMFS4939NT3G

Part No NTMFS4939NT3G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9.3A SO8FL / Trans MOSFET N-CH 30V 15.7A 5-Pin(4+Tab) SO-FL T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 9.3A (Ta), 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 28.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1954pF @ 15V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 920mW (Ta), 30W (Tc)
Rds On (Maximum) @ Id, Vgs 5.5 mOhm @ 30A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package 5-DFN (5x6) (8-SOFL)
Package 8-PowerTDFN, 5 Leads
Win Source Part Number 790855-NTMFS4939NT3G
Popularity Medium
Supply and Demand Status Limited
Family Name NTMFS4939N
Introduction Date September 01, 2009
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian NTMFS4939NT3G CAD Model

Description

ON Semiconductor NTMFS4939NT3G Power MOSFET

The ON Semiconductor NTMFS4939NT3G is a high-performance, N-channel Power MOSFET designed to deliver efficiency and power density in a wide range of applications. This MOSFET is part of ON Semiconductor's portfolio of energy-efficient devices, which are engineered to minimize power losses and improve overall system performance.

With a robust and durable design, the NTMFS4939NT3G features a maximum drain-to-source voltage (VDS) of 30V, making it suitable for various power management tasks. The device can handle a continuous drain current (ID) of up to 40A at 25°C, ensuring it can support high current operations with ease. Additionally, the NTMFS4939NT3G boasts a low on-resistance (RDS(on)) of just 3.1mΩ at a gate voltage of 10V, which contributes to its high efficiency by reducing conduction losses.

One of the key features of this MOSFET is its single-pulse avalanche energy (EAS) rating, which provides robustness against unexpected voltage spikes, enhancing the reliability of the device in harsh environments. Furthermore, the NTMFS4939NT3G comes in a compact, surface-mountable 5x6mm flat-lead package, which is designed to optimize the thermal performance and allow for better heat dissipation. This contributes to the device's longevity and stable operation over extended periods.

ON Semiconductor's NTMFS4939NT3G is an ideal choice for a variety of power conversion applications, including DC-DC converters, motor drives, and power supply circuits for consumer electronics, computing devices, and automotive systems. Its fast switching speed and low gate charge (QG) enhance the efficiency of high-frequency circuits, making it a preferred option for modern, energy-conscious designs.

Overall, the NTMFS4939NT3G Power MOSFET from ON Semiconductor is a testament to the company's commitment to providing advanced semiconductor solutions that meet the evolving needs of the electronics industry. It offers designers a combination of performance, efficiency, and reliability, all packed into a small footprint, making it a valuable component in any power management system.

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