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NTMFS4941NT1G

Part No NTMFS4941NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9A SO8FL
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A (Ta), 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 25.5nC @ 10V
Max Input Capacitance 1650pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 910mW (Ta), 25.5W (Tc)
Maximum Rds On at Id,Vgs 6.2 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 5-DFN (5x6) (8-SOFL)
Dimension 8-PowerTDFN, 5 Leads
Win Source Part Number 045385-NTMFS4941NT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTMFS4941NT1G CAD Model

Description

The NTMFS4941NT1G is a cutting-edge Power MOSFET brought to you by ON Semiconductor, a trusted leader in the semiconductor industry. This high-performance, single N-channel MOSFET is designed for optimal power regulation and conversion in a wide variety of applications. Its compact footprint and energy-efficient design make it a popular choice for engineers and designers alike.

Key Features

  • Low RDS(on): The device features a low on-resistance, which translates to reduced conduction losses and improved power efficiency in applications.
  • High Continuous Drain Current (ID): With the capability to handle a continuous drain current, the NTMFS4941NT1G is suitable for high-power applications.
  • Enhanced Power Density: Its compact size combined with high performance ensures a high power density, which is essential for space-constrained applications.
  • RoHS Compliant: The product complies with the RoHS directive, which means it is free from hazardous substances, making it environmentally friendly and safe for use in various consumer electronics.
  • Advanced High Cell Density Trench Technology: This technology provides superior performance and reliability, ensuring the MOSFET operates effectively under a wide range of conditions.

Applications

The NTMFS4941NT1G is versatile and can be used in numerous applications, including:

  • DC/DC converters
  • Power supply units
  • Motor control systems
  • Computing systems
  • Automotive applications
  • Power management solutions

Technical Specifications

Some of the key technical specifications of the NTMFS4941NT1G include a maximum drain-source voltage (VDS) of 30V, a maximum gate-source voltage (VGS) of ±20V, and a maximum continuous drain current (ID) at 25°C of 11.5A. The device also features a low gate charge (Qg), which enhances switching performance.

Quality and Reliability

ON Semiconductor is committed to providing high-quality products that meet stringent industry standards. The NTMFS4941NT1G is no exception and is designed to offer reliable performance over its lifetime, making it a smart choice for critical applications where failure is not an option.

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Pricing & Ordering

Quantity Unit Price Ext. Price
170+ $0.3494 $59.3980
405+ $0.2868 $116.1540
625+ $0.2778 $173.6250
860+ $0.2688 $231.1680
1,115+ $0.2599 $289.7885
1,490+ $0.2330 $347.1700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,510 pieces
MOQ: 170 pcs
Order Increment : 1 pcs
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