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NTMFS4C027NAT1G

Part No NTMFS4C027NAT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description NTMFS4C02 - Trench 6 30V NCH
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1670 pF @ 15 V
Power Dissipation (Max) 760mW (Ta), 25.5W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Standard Package 671 pcs
Win Source Part Number 832944-NTMFS4C027NAT1G
Ultra Librarian 3D Model Ultra Librarian NTMFS4C027NAT1G CAD Model

Description

The NTMFS4C027NAT1G is a cutting-edge N-channel MOSFET produced by ON Semiconductor, which is renowned for its high efficiency and reliability. This component is designed to meet the stringent requirements of modern electronic circuits, providing a perfect blend of low on-resistance and high switching performance. It's an ideal choice for a wide range of applications, including power management, conversion, and regulation tasks in consumer, automotive, and industrial electronics.

Key Features

  • Low RDS(on): The device features an exceptionally low on-state resistance of only 2.7 mΩ (typical), which reduces conduction losses and enhances overall efficiency.
  • High Continuous Drain Current (ID): With a robust continuous drain current of 300 A, the NTMFS4C027NAT1G is capable of handling high power levels, making it suitable for demanding applications.
  • Power Dissipation: This MOSFET can dissipate up to 3.8 W, ensuring reliable operation even under high power conditions.
  • Advanced Technology: Utilizing ON Semiconductor's proprietary Trench Field Stop technology, the device offers enhanced switching speeds and reduced gate charge, which translates to improved performance in switching applications.
  • High Temperature Operation: The NTMFS4C027NAT1G is designed to operate at junction temperatures ranging from -55°C to 150°C, providing reliable performance even under extreme conditions.
  • Package: It comes in a compact 5x6mm footprint in a RoHS-compliant, halogen-free, SO-8FL package, which is suitable for space-constrained applications.
  • Environmental Compliance: ON Semiconductor ensures that the NTMFS4C027NAT1G meets environmental standards, including compliance with Pb-free and RoHS requirements.

Applications

The NTMFS4C027NAT1G is versatile enough to be used in various applications, such as:

  • DC/DC Converters
  • Motor Drives
  • Power Supply Units
  • Battery Management Systems
  • Load Switches
  • Automotive Electronics

In summary, the NTMFS4C027NAT1G from ON Semiconductor is a high-performance, N-channel MOSFET that offers excellent efficiency, robust power handling, and high reliability. Its advanced features make it a top choice for engineers looking to improve the performance and energy efficiency of their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5334 $58.6740
265+ $0.4377 $115.9905
410+ $0.4240 $173.8400
565+ $0.4104 $231.8760
730+ $0.3966 $289.5180
975+ $0.3557 $346.8075
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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