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NTMFS4C13NT1G

Part No NTMFS4C13NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 38A SO8FL
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.2A (Ta), 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.1V @ 250μA
Max Gate Charge 15.2nC @ 10V
Max Input Capacitance 770pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 750mW (Ta)
Maximum Rds On at Id,Vgs 9.1 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 5-DFN (5x6) (8-SOFL)
Dimension 8-PowerTDFN
Win Source Part Number 060678-NTMFS4C13NT1G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTMFS4C13NT1G CAD Model

Description

ON Semiconductor NTMFS4C13NT1G N-Channel Power MOSFET

The ON Semiconductor NTMFS4C13NT1G is a high-performance N-Channel Power MOSFET designed to meet the demanding requirements of modern electronic circuits. This MOSFET is part of ON Semiconductor's portfolio of power management devices, known for their efficiency and reliability. The NTMFS4C13NT1G is specifically engineered to deliver low on-resistance and a high switching performance, making it an ideal choice for a wide range of power applications.

Key Features:

  • Low RDS(on): This device boasts an incredibly low on-resistance, which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Current Capacity: With a continuous drain current (ID) of 30A, this MOSFET can handle high current applications, making it suitable for power-intensive tasks.
  • Power Dissipation: It has an excellent power dissipation capability of 48W, ensuring that the device can manage the heat generated during operation effectively.
  • Fast Switching Speed: The NTMFS4C13NT1G is designed for fast switching applications, providing quick response times that are critical in high-speed circuitry.
  • Operating Temperature Range: This MOSFET operates over a wide temperature range from -55°C to 150°C, offering reliable performance in extreme conditions.
  • Compact Package: Housed in a compact 5x6mm footprint, the device enables designers to reduce PCB space without compromising on performance.

Applications:

The NTMFS4C13NT1G is versatile and can be used in various applications, including:

  • DC/DC Converters
  • Power Supply Units (PSUs)
  • Motor Drives
  • Automotive Systems
  • Computing and Server Systems
  • Switch Mode Power Supplies (SMPS)

ON Semiconductor's commitment to quality ensures that the NTMFS4C13NT1G meets stringent industry standards for performance and reliability. Whether you're designing power systems for consumer electronics, automotive, or industrial applications, the NTMFS4C13NT1G is an excellent choice for efficient power management and switching.

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Pricing & Ordering

Quantity Unit Price Ext. Price
170+ $0.3494 $59.3980
405+ $0.2868 $116.1540
625+ $0.2778 $173.6250
860+ $0.2688 $231.1680
1,115+ $0.2599 $289.7885
1,490+ $0.2330 $347.1700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,500 pieces
MOQ: 170 pcs
Order Increment : 1 pcs
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