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NTMFS5113PLT1G

Part No NTMFS5113PLT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description NFET SO8FL 60V 69A 16MOHM / 10A (Ta), 64A (Tc)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr onsemi
Package Tape & Reel
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 10A (Ta) , 64A (Tc)
Base Product Number NTMFS5113
Standard Package 1,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1350777-NTMFS5113PLT1G
Ultra Librarian 3D Model Ultra Librarian NTMFS5113PLT1G CAD Model

Description

ON Semiconductor NTMFS5113PLT1G - Power MOSFET

The NTMFS5113PLT1G is a high-performance Power MOSFET brought to you by ON Semiconductor, renowned for their innovative approach to semiconductor solutions. This particular component is designed to meet the rigorous demands of power regulation in modern electronic applications. It's an integral part of the power management in systems ranging from automotive to industrial, computing to telecom, and beyond.

Constructed with advanced PowerTrench® technology, the NTMFS5113PLT1G offers an exceptionally low on-resistance (R<sub>DS(on)) which translates to higher efficiency in power conversion and management. This feature is crucial in applications where energy efficiency is paramount, such as in portable devices where battery life is a critical factor.

With a 30V drain-to-source voltage (V<sub>DSS), this MOSFET can handle significant voltage levels, making it suitable for a variety of switching applications. Its single N-Channel configuration allows for simplified circuit design, and the device comes in a compact, surface-mountable package, specifically a 5mm x 6mm Power 56 Flat No-Lead package. This space-saving design is of particular advantage in modern electronics where the real estate on PCBs (Printed Circuit Boards) is at a premium.

The NTMFS5113PLT1G also features a low gate charge (Q<sub>G) and a low Crss (reverse transfer capacitance), which are beneficial for fast switching applications. This results in reduced switching losses and improves the overall performance of the application it's used in.

For thermal management, this MOSFET is designed with an excellent thermal resistance, ensuring reliability and longevity of the device under various operating conditions. This is especially important in high-power and high-temperature environments where thermal stability is a must.

In summary, the ON Semiconductor NTMFS5113PLT1G is a robust and efficient solution for your power control needs. Its combination of low on-resistance, high voltage capacity, fast switching, and thermal efficiency make it a versatile choice for designers looking to optimize their power management systems.

Key Features:

  • 30V Drain-to-Source Voltage (V<sub>DSS)
  • Low On-Resistance (R<sub>DS(on))
  • PowerTrench® Technology for Enhanced Efficiency
  • Compact 5mm x 6mm Power 56 Flat No-Lead Package
  • Low Gate Charge (Q<sub>G) and Reverse Transfer Capacitance
  • Excellent Thermal Resistance

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