The NTMS4176PR2G is a high-performance N-Channel Power MOSFET designed and manufactured by ON Semiconductor, a leading supplier in the semiconductor industry. This MOSFET is engineered to deliver efficient power management and conversion for a variety of applications, including computing, automotive, consumer, and industrial sectors.
Key Features
- Low On-Resistance: The NTMS4176PR2G boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
- High Switching Speed: With its fast switching capabilities, this MOSFET is ideal for high-frequency applications, ensuring minimal power loss and heat generation during operation.
- Advanced Technology: Utilizing ON Semiconductor's advanced trench technology, the NTMS4176PR2G offers superior performance in a compact package, making it a suitable choice for space-constrained applications.
- Power Dissipation: This device is capable of withstanding a significant amount of power dissipation, which is essential for maintaining reliability and longevity in high-power systems.
- Low Gate Charge: The low gate charge characteristic of the NTMS4176PR2G ensures that minimal energy is required to control the MOSFET, further enhancing its efficiency.
Applications
The versatility of the NTMS4176PR2G makes it suitable for a wide array of applications, including:
- Power supply units (PSUs)
- DC-DC converters
- Motor drives
- Automotive systems
- LED lighting solutions
- Switch mode power supplies (SMPS)
Product Specifications
Parameter
Value
Drain-to-Source Voltage (V<sub>DSS)
30 V
Continuous Drain Current (I<sub>D)
11.5 A
Power Dissipation (P<sub>D)
2.5 W
Operating Temperature Range
-55°C to +150°C
With its robust construction and advanced features, the ON Semiconductor NTMS4176PR2G N-Channel Power MOSFET is a reliable and efficient solution for designers looking to enhance the performance of their power management systems.