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NTMS4176PR2G

Part No NTMS4176PR2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 5.5A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 17nC @ 4.5V
Max Input Capacitance 1720pF @ 24V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 810mW (Ta)
Maximum Rds On at Id,Vgs 18 mOhm @ 9.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 093464-NTMS4176PR2G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTMS4176PR2G CAD Model

Description

The NTMS4176PR2G is a high-performance N-Channel Power MOSFET designed and manufactured by ON Semiconductor, a leading supplier in the semiconductor industry. This MOSFET is engineered to deliver efficient power management and conversion for a variety of applications, including computing, automotive, consumer, and industrial sectors.

Key Features

  • Low On-Resistance: The NTMS4176PR2G boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Switching Speed: With its fast switching capabilities, this MOSFET is ideal for high-frequency applications, ensuring minimal power loss and heat generation during operation.
  • Advanced Technology: Utilizing ON Semiconductor's advanced trench technology, the NTMS4176PR2G offers superior performance in a compact package, making it a suitable choice for space-constrained applications.
  • Power Dissipation: This device is capable of withstanding a significant amount of power dissipation, which is essential for maintaining reliability and longevity in high-power systems.
  • Low Gate Charge: The low gate charge characteristic of the NTMS4176PR2G ensures that minimal energy is required to control the MOSFET, further enhancing its efficiency.

Applications

The versatility of the NTMS4176PR2G makes it suitable for a wide array of applications, including:

  • Power supply units (PSUs)
  • DC-DC converters
  • Motor drives
  • Automotive systems
  • LED lighting solutions
  • Switch mode power supplies (SMPS)

Product Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 30 V Continuous Drain Current (I<sub>D) 11.5 A Power Dissipation (P<sub>D) 2.5 W Operating Temperature Range -55°C to +150°C

With its robust construction and advanced features, the ON Semiconductor NTMS4176PR2G N-Channel Power MOSFET is a reliable and efficient solution for designers looking to enhance the performance of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.4043 $58.6235
350+ $0.3315 $116.0250
540+ $0.3211 $173.3940
745+ $0.3107 $231.4715
965+ $0.3003 $289.7895
1,290+ $0.2691 $347.1390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,550 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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