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NTMS4840NR2G

Part No NTMS4840NR2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 4.5A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 9.5nC @ 10V
Max Input Capacitance 520pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 680mW (Ta)
Maximum Rds On at Id,Vgs 24 mOhm @ 6.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 060684-NTMS4840NR2G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTMS4840NR2G CAD Model

Description

ON Semiconductor NTMS4840NR2G Overview

The NTMS4840NR2G is a high-performance Power MOSFET produced by ON Semiconductor, a renowned leader in energy-efficient innovations. This MOSFET is part of the TrenchMOS portfolio, which is well-known for its low on-resistance and minimal gate charge, making it an excellent choice for power management applications where efficiency is critical.

Key Features and Benefits

  • Low R<sub>DS(on): The device boasts an extremely low on-resistance, which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Current Capability: With its ability to handle high currents, the NTMS4840NR2G is suitable for demanding power conversion tasks, including DC-DC converters and motor control circuits.
  • Single P-Channel: As a P-Channel MOSFET, it allows for simpler drive circuitry in high-side switch configurations, which can be beneficial in battery-powered circuits and load switching.
  • Power-Saving: The device's low threshold voltage ensures that it can be driven at lower voltages, thus conserving power and extending battery life in portable applications.
  • Surface-Mount Package: Encased in a compact SO-8 package, the NTMS4840NR2G is designed for space-saving PCB designs without compromising performance.
  • RoHS Compliant: Adhering to environmental standards, this MOSFET is RoHS compliant, making it suitable for use in environmentally sensitive applications.

Applications

The NTMS4840NR2G from ON Semiconductor is versatile and can be used in a wide range of applications. Its efficiency and power handling capabilities make it an ideal choice for:

  • Power supply circuits
  • DC-DC converters
  • Motor control systems
  • Load switch circuits
  • Battery management systems
  • Power management for portable devices

Technical Specifications

The NTMS4840NR2G has a continuous drain current of up to 6.7 A, and it operates over a wide temperature range, making it reliable in various environmental conditions. The MOSFET also features a maximum power dissipation of 2.5 W, allowing it to handle significant power within its compact form factor.

In summary, the NTMS4840NR2G is a high-performance, energy-efficient solution from ON Semiconductor that meets the needs of modern power management and conversion applications, offering designers a balance of efficiency, power handling, and space-saving design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $16.2485 $64.9940
9+ $13.3322 $119.9898
14+ $12.9152 $180.8128
19+ $12.4994 $237.4886
24+ $12.0825 $289.9800
32+ $10.8327 $346.6464
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,500 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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