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NTMS4N01R2G

Part No NTMS4N01R2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 3.3A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 16nC @ 4.5V
Max Input Capacitance 1200pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 770mW (Ta)
Maximum Rds On at Id,Vgs 40 mOhm @ 4.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1083945-NTMS4N01R2G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTMS4N01R2G CAD Model

Description

Introducing the NTMS4N01R2G from ON Semiconductor

The NTMS4N01R2G is a cutting-edge N-channel Power MOSFET developed by ON Semiconductor, a leading provider of semiconductor-based solutions. This high-performance component is designed to meet the rigorous demands of modern electronic applications, offering an exceptional blend of efficiency, reliability, and power density.

Key Features

  • Low On-Resistance: The NTMS4N01R2G boasts an impressively low on-resistance, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Current Capacity: With the ability to handle a substantial continuous drain current, this MOSFET is well-suited for high-power applications that require robust current handling capabilities.
  • Thermal Performance: Engineered with thermal management in mind, the NTMS4N01R2G ensures reliable operation even under high temperature conditions, making it ideal for applications with limited cooling options.
  • Low Gate Charge: The device features a low gate charge, which facilitates faster switching speeds and reduces power losses during the switching process.
  • Small Footprint: Housed in a compact SOIC-8 package, the NTMS4N01R2G minimizes board space requirements, which is crucial for space-constrained designs.

Applications

The NTMS4N01R2G is versatile and can be utilized in a wide array of applications, including but not limited to:

  • Power Management Solutions
  • DC/DC Converters
  • Motor Drives
  • Switch Mode Power Supplies (SMPS)
  • Battery Management Systems
  • Automotive Electronics

Quality and Reliability

ON Semiconductor is committed to the highest standards of quality and reliability, and the NTMS4N01R2G is no exception. Each MOSFET is rigorously tested to ensure it meets the stringent requirements of industrial and automotive applications. With ON Semiconductor's reputation for excellence, customers can confidently integrate the NTMS4N01R2G into their designs, knowing they are backed by a leader in the semiconductor industry.

Conclusion

Whether you're designing power supplies, motor controllers, or any other power-sensitive application, the NTMS4N01R2G from ON Semiconductor offers the performance, efficiency, and reliability needed to elevate your product's capabilities. Its advanced features and compact design make it an excellent choice for innovators looking to push the boundaries of what's possible in electronic design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.4294 $57.9690
330+ $0.3524 $116.2920
510+ $0.3414 $174.1140
700+ $0.3303 $231.2100
905+ $0.3194 $289.0570
1,215+ $0.2864 $347.9760
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,500 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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