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NTP7D3N15MC

Part No NTP7D3N15MC
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 12.1/101A TO220 / N-Channel 150 V 12.1A (Ta), 101A (Tc) 2.4W (Ta), 166W (Tc) Through Hole TO-220
Datasheet
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer onsemi
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 12.1A, 101A (Tc)
Rds On (Max) @ Id, Vgs 7.3mOhm @ 62A, 10V
Vgs(th) (Max) @ Id 4.5V @ 342µA
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4250 pF @ 75 V
Power Dissipation (Max) 2.4W, 166W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Through Hole
Supplier Device Package TO-220
Case / Package TO-220-3
Base Product Number NTP7D3
RoHS Status ROHS3 Compliant
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 488-NTP7D3N15MC
Standard Package 50
Win Source Part Number 1324745-NTP7D3N15MC
Ultra Librarian 3D Model Ultra Librarian NTP7D3N15MC CAD Model

Description

ON Semiconductor NTP7D3N15MC MOSFET

The NTP7D3N15MC from ON Semiconductor is a cutting-edge, high-performance Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed for a wide range of power management applications. This device is a part of ON Semiconductor's portfolio of energy-efficient power solutions, providing designers with a reliable and robust component for their circuit designs.

The NTP7D3N15MC is characterized by its N-channel configuration and a maximum continuous drain current (I<sub>D) of 7 A, making it suitable for handling moderate power loads. Its drain-to-source voltage (V<sub>DSS) is rated at 150 V, which allows it to operate effectively in high-voltage environments. Additionally, the MOSFET features a low on-state resistance (R<sub>DS(on)) of 135 mΩ at a gate voltage of 10 V, which translates to reduced conduction losses and improved overall efficiency.

The device comes in a compact, surface-mount DPAK (TO-252) package, which is ideal for space-constrained applications. Its package is engineered to provide excellent thermal performance, ensuring reliability and longevity even under high operating temperatures. The NTP7D3N15MC is also characterized by its fast switching speed, contributing to reduced switching losses and enhanced performance in high-frequency applications.

ON Semiconductor has designed the NTP7D3N15MC with various built-in protection features, such as a robust gate oxide layer and a body diode with a low reverse recovery time, which helps to protect the device from potential damage caused by reverse currents. These features make the MOSFET a safe and durable choice for applications such as DC-DC converters, motor drives, and power supply circuits.

In summary, the NTP7D3N15MC MOSFET from ON Semiconductor is a versatile and efficient component that meets the demands of modern power management systems. Its combination of high-voltage capability, low on-resistance, fast switching, and compact packaging makes it an excellent choice for engineers looking to optimize their power designs for performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.3866 $52.6392
25+ $4.1036 $102.5900
38+ $3.9621 $150.5598
55+ $3.6791 $202.3505
71+ $3.5376 $251.1696
89+ $3.3961 $302.2529
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 31,658 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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