The ON Semiconductor NTPF082N65S3F is a high-performance, N-channel power MOSFET designed to deliver exceptional efficiency and power density for a wide range of applications. This MOSFET is part of ON Semiconductor's state-of-the-art field effect transistors that are engineered to reduce on-state resistance and minimize energy loss during operation.

Key Features:

• Voltage Rating: The NTPF082N65S3F boasts a 650V drain-to-source voltage (V<sub>DS), making it suitable for high-voltage applications.
• Current Capacity: With a continuous drain current (I<sub>D) of 82A, this MOSFET can handle significant power for its size.
• Low R<sub>DS(on): It features an ultra-low on-state resistance of 8.7 mΩ at 10 V, which enhances its efficiency by minimizing conduction losses.
• High-Speed Switching: The device is optimized for fast switching, reducing switching losses and improving performance in high-frequency circuits.
• Robust Design: The NTPF082N65S3F is designed to withstand harsh conditions and is characterized by its ruggedness and high reliability.
• Thermal Performance: Excellent thermal performance is ensured by the package design, which aids in heat dissipation.

Applications:

The versatility of the NTPF082N65S3F allows it to be used in a variety of applications, including:

• Power supply units (PSUs)
• Uninterruptible power supplies (UPS)
• Electric vehicle (EV) charging stations
• Solar inverters
• Industrial power management systems

Package and Quality:

The NTPF082N65S3F comes in a TO-220 FullPAK package, which is known for its robustness and ease of mounting on a printed circuit board (PCB). ON Semiconductor adheres to stringent quality control measures, ensuring that each MOSFET meets the highest industry standards for performance and reliability.

With its combination of high efficiency, durability, and thermal performance, the NTPF082N65S3F from ON Semiconductor is an excellent choice for designers looking to optimize their power systems for both performance and cost.