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NTR4170NT3G

Part No NTR4170NT3G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 3.2A SGL SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 4.76nC @ 4.5V
Max Input Capacitance 432pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 480mW (Ta)
Maximum Rds On at Id,Vgs 55 mOhm @ 3.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1084009-NTR4170NT3G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTR4170NT3G CAD Model

Description

ON Semiconductor NTR4170NT3G - N-Channel Power MOSFET

The NTR4170NT3G is a high-performance N-Channel Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is tailored for low voltage power switching applications and is widely recognized for its efficiency and reliability.

Key Features:

  • Low On-Resistance: The device boasts a low on-resistance, which reduces power loss and enhances efficiency during operation, making it an ideal choice for power management tasks.
  • High-Speed Switching: Engineered for fast switching applications, the NTR4170NT3G can switch on and off rapidly, which is crucial for applications requiring quick response times.
  • Low Threshold Voltage: A low gate threshold voltage ensures that the device can be driven at lower voltages, which is beneficial for battery-operated devices and low-voltage circuits.
  • Small Footprint: The compact SOT-23 package is space-saving and allows for high-density board layouts, which is essential for modern, miniaturized electronic devices.

Applications:

The NTR4170NT3G is versatile and can be used in a variety of applications, including:

  • Power Management Functions
  • DC/DC Converters
  • Battery Powered Systems
  • Load Switches
  • Motor Control Circuits
  • Portable Electronic Devices

Specifications:

Parameter Value
Drain-to-Source Voltage (VDS) 30V
Gate-to-Source Voltage (VGS) ±20V
Continuous Drain Current (ID) 6.3A
Power Dissipation (PD) 1.25W
Operating Temperature Range -55°C to 150°C

The ON Semiconductor NTR4170NT3G is a testament to the company's commitment to providing innovative, high-quality components that enhance the performance and energy efficiency of electronic systems. Its robust design and superior electrical characteristics make it an excellent choice for designers looking to optimize their power management solutions.

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