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NTS4172NT1G

Part No NTS4172NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 1.6A SC70-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 4.38nC @ 4.5V
Max Input Capacitance 381pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 294mW (Ta)
Maximum Rds On at Id,Vgs 93 mOhm @ 1.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-3 (SOT323)
Dimension SC-70, SOT-323
Win Source Part Number 060697-NTS4172NT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTS4172NT1G CAD Model

Description

ON Semiconductor NTS4172NT1G Product Overview

The NTS4172NT1G is a high-performance, low-power P-Channel MOSFET designed and manufactured by ON Semiconductor, a leading supplier in the semiconductor industry. This field-effect transistor (FET) is an essential component for modern electronic applications requiring efficient power management and space-saving solutions.

Key Features

  • Low On-Resistance: The NTS4172NT1G boasts a low on-resistance, which translates to reduced power loss and improved efficiency in circuit operation.
  • High Switching Speed: With its fast switching capabilities, this MOSFET is ideal for high-speed applications, ensuring minimal delay in power regulation.
  • Low Threshold Voltage: The low threshold voltage feature allows for the transistor to be easily turned on with low gate voltages, making it suitable for low-voltage applications.
  • Advanced PowerTrench® Process: ON Semiconductor's proprietary PowerTrench process enhances the MOSFET's performance by optimizing the cell density, which results in lower RDS(on) and reduced capacitance.
  • Compact Footprint: The NTS4172NT1G comes in a small SOT-23 package, making it an excellent choice for space-constrained applications.

Applications

The versatility of the NTS4172NT1G allows it to be used in a wide range of applications. It is particularly well-suited for:

  • Power management in portable and battery-powered devices
  • Load switch applications
  • DC/DC converters
  • Power amplification stages

Quality and Reliability

ON Semiconductor is committed to providing high-quality and reliable components. The NTS4172NT1G is no exception, meeting stringent quality standards to ensure performance and durability across various conditions. It is RoHS-compliant and backed by ON Semiconductor's expertise in semiconductor design and manufacturing.

Summary

The NTS4172NT1G by ON Semiconductor is a top-tier P-Channel MOSFET that offers designers a balance of efficiency, speed, and size. Its advanced features make it an excellent choice for engineers looking to optimize their power management systems with a reliable and compact solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
315+ $0.1839 $57.9285
770+ $0.1510 $116.2700
1,185+ $0.1462 $173.2470
1,635+ $0.1415 $231.3525
2,115+ $0.1368 $289.3320
2,825+ $0.1227 $346.6275
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,210 pieces
MOQ: 315 pcs
Order Increment : 1 pcs
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