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NVD5862NT4G-VF01

Part No NVD5862NT4G-VF01
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 90A DPAK-4
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 18A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 82nC @ 10V
Max Input Capacitance 6000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 4.1W (Ta), 115W (Tc)
Maximum Rds On at Id,Vgs 5.7 mOhm @ 48A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1084113-NVD5862NT4G-VF01
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NVD5862NT4G-VF01 CAD Model

Description

The ON Semiconductor NVD5862NT4G-VF01 is a state-of-the-art MOSFET designed for high-efficiency power management applications. This robust component is engineered to deliver optimal performance in a variety of electronic devices, making it a preferred choice for designers looking to enhance system reliability and extend battery life.

Key Features

  • Low On-Resistance: The NVD5862NT4G-VF01 boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Current Capability: This MOSFET is capable of handling high continuous drain currents, making it suitable for demanding applications that require robust power handling capabilities.
  • Thermal Performance: With an excellent thermal design, the NVD5862NT4G-VF01 can operate effectively over a wide temperature range, ensuring consistent performance even under thermal stress.
  • Logic Level Gate Drive: The device can be driven directly from a microcontroller or logic circuit, simplifying the design and reducing the need for additional driver circuitry.

Applications

The NVD5862NT4G-VF01 is versatile and can be used in a wide array of applications, including:

  • Power supply modules
  • DC-DC converters
  • Motor control systems
  • Automotive applications
  • LED lighting solutions

Product Specifications

The NVD5862NT4G-VF01 is equipped with the following specifications:

  • Package: This MOSFET comes in a compact, surface-mountable package that is suitable for high-density PCB layouts.
  • Drain-to-Source Voltage (V<sub>DS): It supports a maximum drain-to-source voltage, ensuring compatibility with a range of operating voltages.
  • Gate Threshold Voltage (V<sub>GS(th)): The threshold voltage is set to allow for easy switching with standard logic levels.
  • Continuous Drain Current (I<sub>D): The device supports a high continuous drain current, providing ample headroom for high-power applications.
  • R<sub>DS(on): The low on-resistance ensures minimal voltage drop and power dissipation during operation.

With its advanced technology and robust design, the ON Semiconductor NVD5862NT4G-VF01 MOSFET stands out as a reliable and efficient solution for modern power management challenges.

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