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NVMFS5826NLWFT1G

Part No NVMFS5826NLWFT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 8A 5DFN  /  N-Channel 60 V 8A (Ta) 3.6W (Ta), 39W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 25 V
Power Dissipation (Max) 3.6W (Ta), 39W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFS5826
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names NVMFS5826NLWFT1GOSDKR,NVMFS5826NLWFT1GOSTR,NVMFS5826NLWFT1G-ND,NVMFS5826NLWFT1GOSCT
Standard Package 1,500
Win Source Part Number 958685-NVMFS5826NLWFT1G
Ultra Librarian 3D Model Ultra Librarian NVMFS5826NLWFT1G CAD Model

Description

ON Semiconductor NVMFS5826NLWFT1G Overview

The NVMFS5826NLWFT1G is a high-performance, Power MOSFET produced by ON Semiconductor, a leader in the semiconductor industry. This product is designed to meet the needs of modern high-efficiency power conversion applications, including but not limited to, automotive systems, power supplies, and DC-DC converters.

Key Features

  • Low RDS(on): This device offers a very low on-resistance, which translates to reduced conduction losses and improved power efficiency in applications.
  • High Current Capability: The NVMFS5826NLWFT1G supports high continuous drain currents, making it suitable for demanding applications that require robust current handling.
  • Power-33 Package: Enclosed in a compact Power-33 package, the MOSFET provides a space-efficient solution without compromising performance.
  • Single P-Channel: As a single P-Channel MOSFET, it is ideal for use in high-side switch configurations.
  • 100% Rg and UIS Tested: Quality and reliability are ensured as each unit is rigorously tested for gate charge and unclamped inductive switching.

Applications

  • Automotive systems
  • DC-DC converters
  • Power management circuits
  • Load switches
  • Motor control circuits

Technical Specifications

The NVMFS5826NLWFT1G boasts a range of technical specifications that make it a versatile and efficient choice for designers. With a continuous drain current (ID) rating at 25°C of up to 58A, and a pulsed drain current (IDM) of 232A, this MOSFET can handle high-power applications with ease. The maximum power dissipation (PD) is rated at 3.8W, and the device operates over a wide temperature range from -55°C to 150°C, ensuring reliability across various environmental conditions.

With its advanced technology and robust design, the NVMFS5826NLWFT1G from ON Semiconductor represents a state-of-the-art solution for power management challenges in a wide array of electronic systems. Its combination of high performance, efficiency, and reliability makes it a go-to choice for engineers and designers looking to optimize their power conversion applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0949 $60.2195
130+ $0.8984 $116.7920
200+ $0.8703 $174.0600
275+ $0.8422 $231.6050
355+ $0.8142 $289.0410
475+ $0.7300 $346.7500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 78,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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