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NVMFS5C460NT1G

Part No NVMFS5C460NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 19A/71A 5DFN  /  N-Channel 40 V 19A (Ta), 71A (Tc) 3.6W (Ta), 50W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.3mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 25 V
Power Dissipation (Max) 3.6W (Ta), 50W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFS5
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,500
Win Source Part Number 1011067-NVMFS5C460NT1G
Ultra Librarian 3D Model Ultra Librarian NVMFS5C460NT1G CAD Model

Description

ON Semiconductor NVMFS5C460NT1G MOSFET

The ON Semiconductor NVMFS5C460NT1G is a high-performance, N-channel Power MOSFET designed to deliver efficient power management and conversion for a wide range of applications. This MOSFET is part of ON Semiconductor's extensive portfolio of energy-efficient devices, characterized by their low on-resistance and high switching performance.

Key Features

  • Low R<sub>DS(on): The device offers an exceptionally low drain-to-source on-resistance of typically 4.4 mΩ at V<sub>GS = 10 V, which translates to reduced conduction losses and improved overall efficiency in application.
  • High Continuous Drain Current (I<sub>D): It supports a high continuous drain current of up to 317 A, making it suitable for high power density and high-efficiency applications.
  • High-Temperature Performance: With an operating junction temperature range from -55°C to +175°C, the NVMFS5C460NT1G is capable of maintaining performance under extreme conditions.
  • Power Trench® Technology: Utilizing ON Semiconductor's advanced Power Trench process, this MOSFET ensures minimal gate charge (Q<sub>G) and low total gate charge (Q<sub>g(tot)) for fast switching applications.
  • Single Pulse Avalanche Energy Rated (E<sub>as): The device is designed to handle high energy pulses in the avalanche and commutation modes, ensuring reliability and robustness in harsh environments.

Applications

The NVMFS5C460NT1G is ideal for a variety of applications that demand high efficiency and power density. These include:

  • DC/DC converters for servers, telecom, and industrial use
  • Motor drives and inverter systems
  • Synchronous rectification in power supplies
  • Automotive applications, including powertrain and vehicle electrification

Package and Environmental Compliance

The device is offered in a compact 5x6 mm² PQFN package, which is optimized for a small footprint and low-profile applications. It is RoHS compliant and Halogen-free, reflecting ON Semiconductor's commitment to environmental sustainability.

With its outstanding performance characteristics and versatility, the ON Semiconductor NVMFS5C460NT1G MOSFET is a reliable and efficient solution for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9058 $52.3044
42+ $2.3843 $100.1406
65+ $2.3098 $150.1370
90+ $2.2353 $201.1770
116+ $2.1608 $250.6528
155+ $1.9372 $300.2660
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 29,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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