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NVMFS5C612NLT1G

Part No NVMFS5C612NLT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 36A/235A 5DFN  /  N-Channel 60 V 36A (Ta), 235A (Tc) 3.8W (Ta), 167W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 36A (Ta), 235A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6660 pF @ 25 V
Power Dissipation (Max) 3.8W (Ta), 167W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFS5
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,500
Win Source Part Number 962379-NVMFS5C612NLT1G
Ultra Librarian 3D Model Ultra Librarian NVMFS5C612NLT1G CAD Model

Description

ON Semiconductor NVMFS5C612NLT1G

The ON Semiconductor NVMFS5C612NLT1G is a cutting-edge, high-performance N-channel Power MOSFET designed to address a wide range of power management and switching applications. This MOSFET utilizes ON Semiconductor's advanced PowerTrench® technology to deliver superior efficiency, reduced on-state resistance (R<sub>DS(on)), and improved thermal performance.

Key Features

  • Low R<sub>DS(on): Provides higher efficiency and extends battery life when used in portable applications by minimizing conduction losses.
  • High Continuous Drain Current (I<sub>D): Supports a high current rating, making it suitable for demanding applications.
  • Fast Switching Speed: Enhances performance in high-frequency power switching applications.
  • PowerTrench® Technology: Ensures optimal power density and efficiency through an innovative trench process design.
  • Single N-Channel MOSFET: Simplifies design and reduces component count in circuits.
  • RoHS Compliant: Meets environmental standards and regulations for hazardous substances.

Applications

The NVMFS5C612NLT1G is versatile and can be used in a variety of applications, including:

  • DC/DC Converters
  • Power Supply Load Switches
  • Battery Management Systems
  • Motor Control Circuits
  • Computing and Server Applications
  • Telecommunication Equipment

Product Specifications

Parameter Value V<sub>DS (Drain-Source Voltage) 60V I<sub>D (Continuous Drain Current) 24A R<sub>DS(on) (at V<sub>GS = 10V) 3.6 mΩ Package 5x6mm DFN8

With its robust package and advanced features, the ON Semiconductor NVMFS5C612NLT1G offers a reliable and efficient solution for high-performance power management tasks.

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.7590 $57.9390
52+ $2.2638 $117.7176
79+ $2.1931 $173.2549
109+ $2.1224 $231.3416
141+ $2.0517 $289.2897
189+ $1.8394 $347.6466
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,500 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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