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SMMBFJ310LT1G

Part No SMMBFJ310LT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description JFET N-CH 25V 10MA SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity N-Channel JFET
Current Rating 10mA
Voltage Rating 25V
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 1098543-SMMBFJ310LT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SMMBFJ310LT1G CAD Model

Description

ON Semiconductor SMMBFJ310LT1G N-Channel RF Amplifier

The SMMBFJ310LT1G is a high-performance N-Channel RF (Radio Frequency) Amplifier designed and manufactured by ON Semiconductor, a leading name in the semiconductor industry. This product is tailored for demanding applications that require reliable and consistent performance in the RF domain. With its compact SOT-23 package, it is ideal for space-constrained applications.

The SMMBFJ310LT1G offers a superb combination of low noise figure and high gain, which makes it an excellent choice for RF amplification needs in a variety of applications, including but not limited to, telecommunications, satellite communications, and RF circuit designs. Its high-frequency operation extends up to the VHF/UHF spectrum, ensuring versatility across a broad range of RF applications.

Key Features:

  • Frequency Range: The device operates in a broad frequency range, making it suitable for various RF applications.
  • Low Noise Figure: It boasts a low noise figure, which is crucial for maintaining signal integrity in communication systems.
  • High Gain: The amplifier provides a high gain, which is essential for boosting weak RF signals without significant distortion.
  • SOT-23 Package: The small SOT-23 package is ideal for designs where board space is at a premium.
  • Power Dissipation: It has a power dissipation of 225 mW, which means it can handle a moderate amount of power without overheating.
  • Drain-Source Voltage (Vds): The device can tolerate a maximum drain-source voltage of 25 V, providing a good margin for various circuit configurations.
  • Continuous Drain Current (Id): It supports a continuous drain current of 10 mA, sufficient for a wide range of RF applications.

The SMMBFJ310LT1G is built with ON Semiconductor's commitment to quality and reliability. Its robustness and performance make it a wise choice for designers who require an efficient, high-quality N-Channel RF Amplifier. Whether for commercial or industrial applications, this component ensures a seamless integration into RF signal chains, contributing to enhanced system performance and reliability.

With its strong feature set and ON Semiconductor's reputation for durable and consistent products, the SMMBFJ310LT1G stands out as a go-to component for RF amplification needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2376 $51.0840
450+ $0.2226 $100.1700
700+ $0.2151 $150.5700
1,000+ $0.2000 $200.0000
1,300+ $0.1925 $250.2500
1,625+ $0.1850 $300.6250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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