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UMC3NT1G

Part No UMC3NT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.15W SC70
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 35 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package SC-88A (SC-70-5 / SOT-353)
Win Source Part Number 035985-UMC3NT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UMC3NT1G CAD Model

Description

The ON Semiconductor UMC3NT1G is a high-performance, dual NPN transistor designed to deliver efficient and reliable performance for a wide range of applications. This compact and versatile component is housed in a space-saving SOT-363 package, making it an ideal choice for space-constrained applications.

Key Features

  • Transistor Type: Dual NPN - The UMC3NT1G contains two NPN transistors within a single package, providing a convenient solution for designs that require matched transistor pairs.
  • Package: SOT-363 - The small surface-mount package allows for high-density mounting and is suitable for automated assembly processes.
  • Voltage Ratings: With a collector-emitter voltage (Vceo) of 50V and a collector-base voltage (Vcbo) of 60V, the UMC3NT1G can handle moderate voltage applications with ease.
  • Current Handling: The device can manage a continuous collector current (Ic) of up to 100mA, making it suitable for driving small loads or for signal amplification purposes.
  • Power Dissipation: With a total device power dissipation (Pd) of 150mW, this transistor can sustain moderate power levels while maintaining its operational integrity.
  • Gain Bandwidth Product (fT): The UMC3NT1G boasts a high gain bandwidth product of 250MHz, providing excellent frequency response for high-speed signal processing applications.

Applications

The ON Semiconductor UMC3NT1G is suitable for a variety of applications including, but not limited to:

  • Signal amplification and processing
  • Audio amplifiers
  • Switching circuits
  • Driver stages in hi-fi systems
  • Control systems
  • Power management

Quality and Reliability

ON Semiconductor is known for its commitment to quality and the UMC3NT1G is no exception. It is designed to meet stringent requirements, ensuring high reliability and performance in even the most demanding conditions. The device is also RoHS compliant, adhering to environmental standards and regulations.

Whether you are designing consumer electronics, industrial control systems, or communication devices, the UMC3NT1G from ON Semiconductor provides the efficiency, reliability, and performance needed to meet your design goals.

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Pricing & Ordering

Quantity Unit Price Ext. Price
575+ $0.0874 $50.2550
1,395+ $0.0717 $100.0215
2,160+ $0.0695 $150.1200
2,980+ $0.0672 $200.2560
3,850+ $0.0650 $250.2500
5,150+ $0.0583 $300.2450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 297,000 pieces
MOQ: 575 pcs
Order Increment : 1 pcs
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