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Same model may have multiple batches, images only for reference.
IXFP4N60P3 Real Image
Same model may have multiple batches, images only for reference.

IXFP4N60P3

Part No IXFP4N60P3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4A TO-220AB
Datasheet
IXFP4N60P3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 6.9nC @ 10V
Max Input Capacitance 365pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 114W (Tc)
Maximum Rds On at Id,Vgs 2.2 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1049507-IXFP4N60P3
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IXFP4N60P3 CAD Model

Description

The IXYS 1049507-IXFP4N60P3 is an N-channel MOSFET electronic component with a drain-source breakdown voltage of 600V and a continuous drain current of 4A (Tc) at 25°C.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 4A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 6.9nC @ 10V
  • Maximum Input Capacitance: 365pF @ 25V
  • Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2A, 10V
  • Power Dissipation: 114W (Tc)
  • Drive Voltage: 10V
  • Package: TO-220AB
  • Temperature Range: -55°C to 150°C (TJ)
  • Popularity: medium
  • Package Quantity: 50

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