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IRFBC30ASTRRPBF

Part No IRFBC30ASTRRPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 3.6A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 510pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 74W (Tc)
Maximum Rds On at Id,Vgs 2.2 Ohm @ 2.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046838-IRFBC30ASTRRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFBC30ASTRRPBF CAD Model

Description

The Vishay 1046838-IRFBC30ASTRRPBF is a MOSFET transistor that is designed for use in discrete semiconductor products.

  • Channel Type: N-channel
  • Maximum Power Dissipation: 74W
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 3.6A @ 25°C
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id,Vgs: 2.2 Ohm @ 2.2A, 10V
  • Package: D2PAK
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Status: obsolete(EOL)
  • Popularity: medium
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,279 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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