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Same model may have multiple batches, images only for reference.
UN211N-(TX) Real Image
Same model may have multiple batches, images only for reference.

UN211N-(TX)

Part No UN211N-(TX)
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 200MW MINI3
Datasheet
UN211N-(TX) Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 80MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package Mini3-G1
Win Source Part Number 053263-UN211N-(TX)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UN211N-(TX) CAD Model

Description

The Panasonic Electronic Components UN211N-(TX) is a PNP pre-biased transistor that is suitable for use in various applications such as audio equipment, sensors, and power management.

  • Maximum Current Collector: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Case/Package: mini3-G1
  • Mounting: SMD technology.

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