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UNR222100L Real Image
Same model may have multiple batches, images only for reference.

UNR222100L

Part No UNR222100L
Manufacturer Panasonic
Catalog RF Transistors (BJT)
Description TRANS PREBIAS NPN 200MW MINI3  /  Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 200 MHz 200 mW Surface Mount Mini3-G1
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Panasonic Electronic Components
Package Tape & Reel
Product Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 100mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max) 1µA
Frequency - Transition 200 MHz
Power - Max 200 mW
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package Mini3-G1
Base Product Number UNR222
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Other Names UNR222100LDKR,UNR222100LCT-NDR,UNR222100LDKR-NDR,UNR222100LTR,UNR222100LTR-NDR,UNR222100LCT
Standard Package 3,000
Win Source Part Number 1102368-UNR222100L
Ultra Librarian 3D Model Ultra Librarian UNR222100L CAD Model

Description

The UNR222100L NPN Pre-Biased transistor is a bipolar (BJT) device that comes in a TO-236-3, SC-59, SOT-23-3 package.

  • Maximum Power: 200 mW
  • Maximum collector-emitter breakdown voltage: 50 V
  • Current collector (Ic): rated for a maximum of 500 mA
  • Vce saturation: 250mV @ 5mA, 10mA
  • Current collector cutoff: 1µA
  • DC current gain (hFE): 40 @ 100mA, 10V
  • Frequency transition: 200 MHz
  • Supplier device package: Mini3-G1
  • Base product number: UNR222

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