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Same model may have multiple batches, images only for reference.
PJD5NA80_L2_00001 Panjit
Same model may have multiple batches, images only for reference.

PJD5NA80_L2_00001

Part No PJD5NA80_L2_00001
Manufacturer Panjit
Catalog Transistors - FETs, MOSFETs - RF
Description 800V N-CHANNEL MOSFET  /  N-Channel 800 V 5A (Ta) 140W (Tc) Surface Mount TO-252
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Panjit International Inc.
Package Tape & Reel
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.7Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 25 V
Power Dissipation (Max) 140W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 3757-PJD5NA80_L2_00001TR,3757-PJD5NA80_L2_00001CT,3757-PJD5NA80_L2_00001DKR
Standard Package 3,000
Win Source Part Number 1140404-PJD5NA80_L2_00001
Ultra Librarian 3D Model Ultra Librarian PJD5NA80_L2_00001 CAD Model

Description

The PJD5NA80_L2_00001 is an N-Channel MOSFET transistor with a drain to source voltage (Vdss) of 800V and a continuous drain current (Id) of 5A @ 25°C.

  • Vdss: 800V
  • Id: 5A @ 25°C
  • Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2.5A, 10V
  • Qg (Max) @ Vgs: 17nC @ 10V
  • Mounting: SMD (SMT)
  • Package: Tape and reel
  • Application: Discrete semiconductor products, FETs in MOSFET applications

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