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Same model may have multiple batches, images only for reference.
HAT2165H Renesas Electronics America
Same model may have multiple batches, images only for reference.

HAT2165H

Part No HAT2165H
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 55A LFPAK
Datasheet
HAT2165H Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 55A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 33nC @ 4.5V
Max Input Capacitance 5180pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 3.3 mOhm @ 27.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 204571-HAT2165H
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian HAT2165H CAD Model

Description

The supply and demand status is limited for this product. It is a reliable component manufactured by Renesas Electronics America (Win Source Part Number: 204571).

  • Type: MOSFET, N-Channel
  • Maximum Power Dissipation: 30W (Tc)
  • Drive Voltage: 4.5V, 10V (Max Rds On, Min Rds On)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 55A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate Charge: 33nC @ 4.5V
  • Maximum Rds On: 3.3 mOhm @ 27.5A, 10V
  • Package: LFPAK
  • Dimensions: SC-100, SOT-669

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9252 $50.8860
135+ $0.7592 $102.4920
205+ $0.7355 $150.7775
285+ $0.7117 $202.8345
365+ $0.6880 $251.1200
490+ $0.6168 $302.2320
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Availability: 25,460 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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