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Same model may have multiple batches, images only for reference.
HAT2266HWS-E Real Image
Same model may have multiple batches, images only for reference.

HAT2266HWS-E

Part No HAT2266HWS-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 30A 5LFPAK / N-Channel 60 V 30A (Ta) 23W (Tc) Surface Mount LFPAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Renesas Electronics America Inc
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 10 V
Power Dissipation (Max) 23W (Tc)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package LFPAK
Package / Case SC-100, SOT-669
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500
Win Source Part Number 1015161-HAT2266HWS-E
Ultra Librarian 3D Model Ultra Librarian HAT2266HWS-E CAD Model

Description

The Renesas Electronics America HAT2266HWS-E is a MOSFET transistor that falls under the category of Discrete Semiconductor Products.

  • Mounting Technology: SMD (SMT)
  • Package: SC-100, SOT-669
  • Drain to Source Voltage (Vdss): 60 V
  • Continuous Drain Current (Id): 30A (Ta) @ 25°C
  • Rds On: 12mOhm @ 15A, 10V
  • Vgs(th): 2.5V @ 1mA
  • Power Dissipation: 23W (Tc)
  • Gate Charge (Qg): 25 nC @ 4.5 V
  • Obsolete: Yes
  • Win Source Part Number: 1015161-HAT2266HWS-E

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