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NESG2031M05-T1-A

Name: NESG2031M05-T1-A
Brand: Renesas Electronics America
SKU: 252172
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	NESG2031M05-T1-A
Manufacturer	Renesas Electronics America
Catalog	RF Transistors (BJT)
Description	NESG2031 - NPN SIGE RF TRANSISTO
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Mfr	Renesas Electronics America
Package	Bulk
Product Status	Obsolete
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5V
Frequency - Transition	25GHz
Noise Figure (dB Typ @ f)	0.8dB ~ 1.3dB @ 2GHz ~ 5.2GHz
Gain	10dB ~ 17dB
Power - Max	175mW
DC Current Gain (hFE) (Min) @ Ic, Vce	130 @ 5mA, 2V
Current - Collector (Ic) (Max)	35mA
Mounting Type	Surface Mount
Package / Case	SOT-343F
Supplier Device Package	M05
Standard Package	1 pcs
ECCN	EAR99
HTSUS	8541.21.0075
Win Source Part Number	252172-NESG2031M05-T1-A
Ultra Librarian 3D Model	Ultra Librarian NESG2031M05-T1-A CAD Model

Alternative Products

Description

The NESG2031M05-T1-A is a bipolar RF transistor from Renesas Electronics America.

Category: Discrete semiconductor products
Specifically designed for: RF applications
Package: Bulk
Standard package quantity: 1 piece
Maximum power rating: 175mW
Maximum collector-emitter breakdown voltage: 5V
Gain range: 10dB to 17dB
Frequency range: 25GHz
Suitable for: Various RF applications requiring high performance and reliability

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
60+	$0.9794	$58.7640
145+	$0.8039	$116.5655
225+	$0.7785	$175.1625
310+	$0.7542	$233.8020
400+	$0.7288	$291.5200
535+	$0.6537	$349.7295

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 2,519 pieces

MOQ: 60 pcs

Order Increment : 1 pcs

Qty:

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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