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Same model may have multiple batches, images only for reference.
NP88N04KUG-E1-AY
Same model may have multiple batches, images only for reference.

NP88N04KUG-E1-AY

Part No NP88N04KUG-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 88A TO-263 / Trans MOSFET N-CH 40V 88A Automotive 3-Pin(2+Tab) D2PAK T/R
Datasheet
NP88N04KUG-E1-AY Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 250nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 15000pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 1.8W (Ta), 200W (Tc)
Rds On (Maximum) @ Id, Vgs 2.9 mOhm @ 44A, 10V
Operating Temperature Range 175°C (TJ)
Mounting SMD
Manufacturer Package TO-263 (D2Pak)
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 790771-NP88N04KUG-E1-AY
Popularity Medium
Supply and Demand Status Balance
Family Name NP88N04KUG
Introduction Date January 05, 2004
ECCN EAR99
Country of Origin Japan
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian NP88N04KUG-E1-AY CAD Model

Description

The Renesas Electronics America NP88N04KUG-E1-AY is a MOSFET technology-based electronic component from Renesas Electronics America.

  • Package: TO-263-3, D2Pak
  • Maximum Power Dissipation: 1.8W (Ta), 200W (Tc)
  • Maximum Rds On: 2.9 mOhm @ 44A, 10V
  • Vgs(th) (Maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 250nC @ 10V
  • Introduction Date: January 05, 2004
  • Estimated EOL Date: 2022
  • Supply and Demand Status: Balanced

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