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Same model may have multiple batches, images only for reference.
RJH60F3DPQ-A0#T0 Renesas Electronics America
Same model may have multiple batches, images only for reference.

RJH60F3DPQ-A0#T0

Part No RJH60F3DPQ-A0#T0
Manufacturer Renesas Electronics America
Catalog IGBTs - Single
Description IGBT 600V 40A 178.5W TO-247A / IGBT Trench 600 V 40 A 178.5 W Through Hole TO-247A
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Renesas Electronics America Inc
Series -
Package Tube
Product Status Active
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 40 A
Vce(on) (Max) @ Vge, Ic 1.82V @ 15V, 20A
Power - Max 178.5 W
Switching Energy -
Input Type Standard
Td (on/off) @ 25°C 44ns/65ns
Test Condition 400V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr) 90 ns
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247A
Base Product Number RJH60F3
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1355795-RJH60F3DPQ-A0#T0
Ultra Librarian 3D Model Ultra Librarian RJH60F3DPQ-A0#T0 CAD Model

Description

The 1355795-RJH60F3DPQ-A0#T0 is a single IGBT (Insulated Gate Bipolar Transistor) integrated circuit manufactured by Renesas Electronics America Inc.

  • Package / Case: TO-247-3
  • Operating Temperature: 150°C (Max)
  • Current - Collector (Ic) (Max): 40A
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Power - Max: 178.5W
  • IGBT Type: Trench
  • Input Type: Standard
  • Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 20A
  • Reverse Recovery Time (trr): 90ns
  • Switching Energy: -
  • MSL: 1 (Unlimited)

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