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Same model may have multiple batches, images only for reference.
RJK4006DPD-00#J2 Renesas Electronics America
Same model may have multiple batches, images only for reference.

RJK4006DPD-00#J2

Part No RJK4006DPD-00#J2
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 400V 8A MP3A
Datasheet
RJK4006DPD-00#J2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 400V
Continuous Drain Current at 25°C 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 20nC @ 10V
Max Input Capacitance 620pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 65W (Tc)
Maximum Rds On at Id,Vgs 800 mOhm @ 4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package MP-3A
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1092301-RJK4006DPD-00#J2
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RJK4006DPD-00#J2 CAD Model

Description

The Renesas Electronics America RJK4006DPD-00#J2 MOSFET is a high-performance N-Channel transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 400V
  • Continuous Drain Current: 8A
  • Mounting: SMD (SMT)
  • Maximum Gate Charge: 20nC @ 10V
  • Maximum Input Capacitance: 620pF @ 25V
  • Maximum Rds On: 800 mOhm @ 4A, 10V
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Maximum Power Dissipation: 65W (Tc)
  • Operating Temperature Range: 150°C (TJ)
  • Product Status: active

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1435 $62.8925
125+ $0.9379 $117.2375
195+ $0.9090 $177.2550
265+ $0.8790 $232.9350
340+ $0.8501 $289.0340
455+ $0.7623 $346.8465
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