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Same model may have multiple batches, images only for reference.
RQA0008RXDQS#H1
Same model may have multiple batches, images only for reference.

RQA0008RXDQS#H1

Part No RQA0008RXDQS#H1
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description RQA0008 - N-CHANNEL POWER MOSFET / N-Channel 16 V 2.4A (Ta) 10W (Tc) Surface Mount UPAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Renesas
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 16 V
Current - Continuous Drain (Id) @ 25°C 2.4A (Ta)
Vgs(th) (Max) @ Id 800mV @ 1mA
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 44 pF @ 0 V
Power Dissipation (Max) 10W (Tc)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package UPAK
Package / Case TO-243AA
RoHS Status RoHS non-compliant
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-RQA0008RXDQS#H1
Standard Package 1
Win Source Part Number 1088925-RQA0008RXDQS#H1
Ultra Librarian 3D Model Ultra Librarian RQA0008RXDQS#H1 CAD Model

Description

The Renesas MOSFET (Metal Oxide) N-Channel FET is a high-performance electronic component that is perfect for use in discrete semiconductor products.

  • Drain to Source Voltage: 16 V
  • Continuous Drain Current: 2.4A (Ta)
  • Power Dissipation: 10W (Tc)
  • Temperature Range: 150°C
  • Package: TO-243AA and UPAK packages
  • Mounting: SMD (SMT) mounting
  • Input Capacitance: 44 pF @ 0 V
  • Ideal for: Use in transistors, FETs, and MOSFETs
  • Status: Obsolete
  • Note: Alternative parts (cross-reference) available
  • RoHS Compliant: No

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