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UPA2793AGR-E1-AT

Part No UPA2793AGR-E1-AT
Manufacturer Renesas Electronics America
Catalog OEM Parts (T - Z)
Description Switching N-Channel Power MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1102456-UPA2793AGR-E1-AT
Categories OEM Parts(T-Z)
Manufacturer Renesas Electronics America
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian UPA2793AGR-E1-AT CAD Model

Description

The UPA2793AGR-E1-AT is a P-channel Power MOSFET from Renesas Electronics America designed for power management applications. It is characterized by low on-resistance and gate charge, making it efficient for DC-DC conversion and load switching.

Applications:

  • DC-DC Converters: Used in step-up and step-down converters to efficiently regulate voltage levels.
  • Load Switches: Controls the flow of power to different parts of a circuit.
  • Power Management in Portable Devices: Optimizes power consumption to extend battery life.
  • Battery Management Systems: Protects and manages battery charging and discharging.
  • Motor Control Circuits: Efficiently controls the speed and torque of small motors.

Features:

  • Low On-Resistance (Rds(on)): Minimizes power loss due to conduction, increasing efficiency.
  • Low Gate Charge (Qg): Reduces switching losses, enabling faster switching speeds and higher efficiency.
  • Small Surface Mount Package: Compact design for space-constrained applications.
  • Logic Level Drive: Can be driven directly by logic signals, simplifying circuit design.
  • Avalanche Capability: Provides robustness against voltage transients and inductive kickback.

Benefits:

  • High Energy Efficiency: Low Rds(on) and Qg contribute to minimal power waste, extending battery life.
  • Reduced Heat Dissipation: Lower power losses result in less heat generation, improving reliability.
  • Compact Design: Small footprint allows for high-density circuit layouts.
  • Simplified Circuit Design: Logic-level drive capability reduces the need for additional driver circuitry.
  • Enhanced Reliability: Avalanche capability protects against voltage spikes and surges.

Technical Specifications:

The UPA2793AGR-E1-AT features a drain-source voltage (Vds) rating suitable for low to medium voltage applications. The gate-source voltage (Vgs) rating is compatible with standard logic levels. The continuous drain current (Id) rating indicates the maximum current the MOSFET can handle under continuous operation. The device is housed in a small surface-mount package for automated assembly. For detailed specifications, refer to the Renesas datasheet, including parameters such as thermal resistance, switching times, and gate charge characteristics. This MOSFET is designed to meet RoHS compliance standards for environmental friendliness.

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