The 2SB1326 is a PNP silicon epitaxial transistor manufactured by Rohm Semiconductor. It is designed for use in low-frequency power amplifier and switching applications. This transistor features low saturation voltage and high current capability, making it suitable for various consumer and industrial electronic devices.

Applications

• Low-frequency power amplifiers
• Switching circuits
• Motor drivers
• DC-DC converters
• Audio amplifiers

Features

• PNP Silicon Epitaxial Transistor
• Low saturation voltage
• High current capability
• High hFE (DC current gain)
• Compact package

Benefits

• Efficient power amplification
• Low power dissipation
• Stable performance
• Easy to design into circuits
• Compact size for space-constrained applications

Technical Specifications

The 2SB1326 has a collector-emitter voltage (VCEO) of -50V, a collector current (IC) of -3A, and a power dissipation (PC) of 1.2W. The DC current gain (hFE) ranges from 70 to 240. The saturation voltage (VCE(sat)) is typically -0.5V at IC = -1A. The transition frequency (fT) is 100 MHz. The operating junction temperature range is -55°C to +150°C. The transistor is available in a compact SOT-89 package.

The Rohm 2SB1326 is a reliable and versatile PNP transistor for use in a variety of low-frequency power applications. Its low saturation voltage and high current capability make it an excellent choice for efficient power amplification and switching circuits.