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Same model may have multiple batches, images only for reference.
HP8MA2TB1 Real Image
Same model may have multiple batches, images only for reference.

HP8MA2TB1

Part No HP8MA2TB1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description HP8MA2 IS LOW ON-RESISTANCE AND  /  Mosfet Array N and P-Channel 30V 18A (Ta), 15A (Ta) 3W (Ta) Surface Mount 8-HSOP
Datasheet
HP8MA2TB1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Rohm Semiconductor
Package Tape & Reel
FET Type N and P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 15A (Ta)
Rds On (Max) @ Id, Vgs 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V, 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 15V, 1250pF @ 15V
Power - Max 3W (Ta)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-PowerTDFN
Supplier Device Package 8-HSOP
Base Product Number HP8MA2
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names HP8MA2TB1CT,HP8MA2TB1TR,HP8MA2TB1DKR
Standard Package 2,500
Win Source Part Number 1063370-HP8MA2TB1
Ultra Librarian 3D Model Ultra Librarian HP8MA2TB1 CAD Model

Description

The HP8MA2TB1 is a discrete semiconductor product used for transistors and MOSFETs. It has a standard package of 2,500 and is mounted using SMD (SMT) technology. The HP8MA2TB1 has a maximum power of 3W and a high gate charge of 22nC @ 10V.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5380 $51.1100
230+ $0.4415 $101.5450
355+ $0.4277 $151.8335
485+ $0.4139 $200.7415
625+ $0.4001 $250.0625
840+ $0.3587 $301.3080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 35,000 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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