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HS8K1TB

Part No HS8K1TB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 30V NCH+NCH POWER MOSFET / Mosfet Array 2 N-Channel (Dual) 30V 10A (Ta), 11A (Ta) 2W (Ta) Surface Mount HSML3030L10
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Manufacturer Rohm Semiconductor
Packaging Reel - TR
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 10A, 11A
Rds On (Max) @ Id, Vgs 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V, 7.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 348pF @ 15V, 429pF @ 15V
Power - Max 2W
Temperature Range - Operating 150°C (TJ)
Mounting Surface Mount
Case / Package 8-UDFN Exposed Pad
Supplier Device Package HSML3030L10
Base Product Number HS8K1
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number HS8K1TBCT,HS8K1TBDKR,HS8K1TBTR
Standard Package 3,000
Win Source Part Number 1324435-HS8K1TB
Ultra Librarian 3D Model Ultra Librarian HS8K1TB CAD Model

Description

The HS8K1TB is a dual N-channel MOSFET array manufactured by Rohm Semiconductor.

  • Suitable for: Power supplies, motor control, and lighting
  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 10A and 11A
  • Maximum Rds On: 14.6mOhm @ 10A, 10V and 11.8mOhm @ 11A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V and 7.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 348pF @ 15V and 429pF @ 15V
  • Package: HSML3030L10

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3162 $58.4970
450+ $0.2594 $116.7300
690+ $0.2513 $173.3970
950+ $0.2432 $231.0400
1,230+ $0.2352 $289.2960
1,645+ $0.2108 $346.7660
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,740 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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