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Same model may have multiple batches, images only for reference.
QS5U27TR Rohm Semiconductor
Same model may have multiple batches, images only for reference.

QS5U27TR

Part No QS5U27TR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 1.5A TSMT5
Datasheet
QS5U27TR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 4.2nC @ 4.5V
Max Input Capacitance 325pF @ 10V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 200 mOhm @ 1.5A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT5
Dimension SOT-23-5 Thin, TSOT-23-5
Win Source Part Number 027056-QS5U27TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian QS5U27TR CAD Model

Description

The Rohm Semiconductor QS5U27TR is a P-channel MOSFET transistor with a Schottky diode (isolated) feature.

  • Maximum Power Dissipation: 1.25W
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Continuous Drain Current: 1.5A @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Case/Package: TSMT5
  • Packaging: reel packaging
  • Ideal for: use in various electronic systems

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Pricing & Ordering

Quantity Unit Price Ext. Price
245+ $0.2061 $50.4945
595+ $0.1691 $100.6145
920+ $0.1639 $150.7880
1,265+ $0.1586 $200.6290
1,635+ $0.1533 $250.6455
2,185+ $0.1374 $300.2190
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,050 pieces
MOQ: 245 pcs
Order Increment : 1 pcs
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