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Same model may have multiple batches, images only for reference.
QS8J12 Real Image
Same model may have multiple batches, images only for reference.

QS8J12

Part No QS8J12
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 12V 4.5A TSMT8
Datasheet
QS8J12 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate, 1.5V Drive
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 4.5A
Maximum Rds On at Id,Vgs 29 mOhm @ 4.5A, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 40nC @ 4.5V
Max Input Capacitance 4200pF @ 6V
Maximum Power Dissipation 550mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT8
Win Source Part Number 042275-QS8J12
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian QS8J12 CAD Model

Description

The manufacturer of this component is Rohm Semiconductor.

  • Supply and Demand Status: balanced
  • Design: designed for specific applications that require its unique specifications
  • Product Type: Discrete Semiconductor Product
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Operating Temperature: 150°C (TJ)
  • Case/Package: TSMT8
  • Maximum Power Dissipation: 550mW
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 4.5A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Max Gate Charge: 40nC @ 4.5V
  • Max Input Capacitance: 4200pF @ 6V
  • Maximum Rds On: 29 mOhm @ 4.5A, 4.5V

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