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Same model may have multiple batches, images only for reference.
R5207AND Real Image
Same model may have multiple batches, images only for reference.

R5207AND

Part No R5207AND
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 10V DRIVE CPT
Datasheet
R5207AND Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 525V
Continuous Drain Current at 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 1mA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 500pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 1 Ohm @ 3.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package CPT3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 046035-R5207AND
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian R5207AND CAD Model

Description

The R5207AND MOSFET from Rohm Semiconductor is a high-quality, N-channel MOSFET that is designed for use in a wide range of applications.

  • Mounting: surface-mount technology
  • Power Dissipation: 40W (Tc)
  • Drive Voltage (max Rds on, min Rds on): 10V
  • Drain-Source Breakdown Voltage: 525V
  • Continuous Drain Current @ 25°C: 7A (Ta)
  • Gate-Source Threshold Voltage: 4.5V @ 1mA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds on at Id,Vgs: 1 Ohm @ 3.5A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $26.0256 $78.0768
6+ $21.3536 $128.1216
9+ $20.6872 $186.1848
12+ $20.0196 $240.2352
15+ $19.3520 $290.2800
20+ $17.3504 $347.0080
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Availability: 1,750 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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