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Same model may have multiple batches, images only for reference.
R6015FNX Real Image
Same model may have multiple batches, images only for reference.

R6015FNX

Part No R6015FNX
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 15A TO-220FM
Datasheet
R6015FNX Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 1660pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 350 mOhm @ 7.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FM
Dimension TO-220-2 Full Pack
Win Source Part Number 1091366-R6015FNX
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian R6015FNX CAD Model

Description

Rohm Semiconductor's 1091366-R6015FNX is an N-channel MOSFET that comes in a TO-220FM package.

  • Maximum Power Dissipation: 50W (Tc)
  • Continuous Drain Current: 15A (Ta)
  • Maximum Rds On at Id,Vgs: 350 mOhm @ 7.5A, 10V
  • Gate-Source Threshold Voltage: 5V @ 1mA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Input Capacitance: 1660pF @ 25V
  • Temperature Range: 150°C (TJ)
  • Risk of Being a Counterfeit: Moderate

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