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RD3S100AAFRATL

Part No RD3S100AAFRATL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 190V 10A TO252  /  N-Channel 190 V 10A (Tc) 85W (Tc) Surface Mount TO-252
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 190 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 182mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
Power Dissipation (Max) 85W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number RD3S100
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 846-RD3S100AAFRATLDKR,846-RD3S100AAFRATLCT,846-RD3S100AAFRATLTR
Standard Package 2,500
Win Source Part Number 980268-RD3S100AAFRATL
Ultra Librarian 3D Model Ultra Librarian RD3S100AAFRATL CAD Model

Description

The RD3S100AAFRATL is an N-channel MOSFET transistor manufactured by Rohm Semiconductor.

  • Drain to Source Voltage: 190 V
  • Continuous Drain Current: 10A @ 25 °C
  • Maximum On-Resistance: 182mOhm @ 5A
  • Gate Charge: 52 nC @ 10 V
  • Mounting: surface mountable
  • Package: TO-252-3
  • Category: discrete semiconductor products
  • Designed for: automotive applications
  • Operating Temperature Range: up to 150 °C

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