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Same model may have multiple batches, images only for reference.
IXFH6N90 Real Image
Same model may have multiple batches, images only for reference.

IXFH6N90

Part No IXFH6N90
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 6A TO247AD  /  N-Channel 900 V 6A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)
Datasheet
IXFH6N90 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AD (IXFH)
Package / Case TO-247-3
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names IXFH6N90-NDR
Standard Package 30
Win Source Part Number 1180714-IXFH6N90
Ultra Librarian 3D Model Ultra Librarian IXFH6N90 CAD Model

Description

The IXFH6N90 is an N-Channel MOSFET transistor designed for use in discrete semiconductor products. IXFH6N90 is a part of the HiPerFET™ series.

  • Drain to Source Voltage: 900V
  • Continuous Drain Current: 6A @ 25°C
  • Rds On (Max): 2Ohm @ 3A and 10V
  • Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25V
  • Temperature Range: -55°C to 150°C

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